CSPP Laboratory

19

The ion kinetics at the wafer edge by the variation of geometry and permittivity of the focus ring in capacitively coupled discharges

Author : Jin Seok Kim, Min Young Hur, Ho Jun Kim, Hae June Lee

Date : 16 December 2019

Link
18

First principles investigation on energetics, structure, and mechanical properties of amorphous carbon films doped with B, N, and Cl

Author : Hwanyeol Park;,Daekwang Woo, Jong Myeong Lee, Se Jun Park, Sungwoo Lee, Ho Jun Kim, Euijoon Yoon, Gun-Do Lee

Date : 12 December 2019

Link
17

Numerical analysis for optimization of the sidewall conditions in a capacitively coupled plasma deposition reactor

Author : Ho Jun Kim, Jin Seok Kim, Hae June Lee

Date : 01 November 2019

Link
16

Effects of nitrogen doping in amorphous carbon layers on the diffusion of fluorine atoms: A first-principles study

Author : Hwanyeol Park, Sungwoo Lee, Ho Jun Kim, Daekwang Woo, Se Jun Park, Jong Myeong Lee, Euijoon Yoon, Gun-Do Lee

Date : 15 April 2019

Link
15

Overall reaction mechanism for a full atomic layer deposition cycle of W films on TiN surfaces: first-principles study

Author : Hwanyeol Park, Sungwoo Lee, Ho Jun Kim, Daekwang Woo, Jong Myeong Lee, Euijoon Yoon, Gun-Do Lee

Date : 20 November 2018

Link
14

Numerical Analysis of the Incident Ion Energy and Angle Distribution in the DC Magnetron Sputtering for the Variation of Gas Pressure

Author : Ho Jun Kim

Date : 31 March 2018

Link
13

Uniformity control of the deposition rate profile of a-Si:H film by gas velocity and temperature distributions in a capacitively coupled plasma reactor

Author : Ho Jun Kim, Hae June Lee

Date : 19 March 2018

Link
12

Advanced PIC-MCC simulation for the investigation of step-ionization effect in intermediate-pressure capacitively coupled plasmas

Author : Jin Seok Kim, Min Young Hur, Chang Ho Kim, Ho Jun Kim, Hae June Lee

Date : 19 February 2018

Link
11

Dissociation reaction of B₂H₆ on TiN surfaces during atomic layer deposition: first-principles study

Author : Hwanyeol Park, Sungwoo Lee, Ho Jun Kim, Euijoon Yoon

Date : 08 December 2017

Link
10

Effects of the wall boundary conditions of a showerhead plasma reactor on the uniformity control of RF plasma deposition

Author : Ho Jun Kim, Hae June Lee

Date : 03 August 2017

Link
9

Analysis of intermediate pressure SiH₄/He capacitively coupled plasma for deposition of an amorphous hydrogenated silicon film in consideration of thermal diffusion effects

Author : Ho Jun Kim, Hae June Lee

Date : 17 July 2017

Link
8

Numerical analysis of the effect of electrode spacing on deposition rate profiles in a capacitively coupled plasma reactor

Author : Ho Jun Kim, Hae June Lee

Date : 05 October 2016

Link
7

2D fluid model analysis for the effect of 3D gas flow on a capacitively coupled plasma deposition reactor

Author : Ho Jun Kim, Hae June Lee

Date : 06 April 2016

Link
6

Effect of electrode spacing on the density distributions of electrons, ions, and metastable and radical molecules in SiH4/NH3/N2/He capacitively coupled plasmas

Author : Ho Jun Kim, Wonkyun Yang, Junghoon Joo

Date : 29 July 2015

Link
5

Stress control of sputtered W film using W/WN multilayer

Author : Dong-Hoon Han, Jong-yong Bae, Se Jun Park, Won-Ki Jung, Ho Jun Kim, Jaihyung Won

Date : 29 March 2013

Link

페이징

Publications

Publications

publications

The ion kinetics at the wafer edge by the variation of geometry and permittivity of the focus ring in capacitively coupled discharges

First principles investigation on energetics, structure, and mechanical properties of amorphous carbon films doped with B, N, and Cl

Numerical analysis for optimization of the sidewall conditions in a capacitively coupled plasma deposition reactor

Effects of nitrogen doping in amorphous carbon layers on the diffusion of fluorine atoms: A first-principles study

Overall reaction mechanism for a full atomic layer deposition cycle of W films on TiN surfaces: first-principles study

Numerical Analysis of the Incident Ion Energy and Angle Distribution in the DC Magnetron Sputtering for the Variation of Gas Pressure

Uniformity control of the deposition rate profile of a-Si:H film by gas velocity and temperature distributions in a capacitively coupled plasma reactor

Advanced PIC-MCC simulation for the investigation of step-ionization effect in intermediate-pressure capacitively coupled plasmas

Dissociation reaction of B₂H₆ on TiN surfaces during atomic layer deposition: first-principles study

Effects of the wall boundary conditions of a showerhead plasma reactor on the uniformity control of RF plasma deposition

Analysis of intermediate pressure SiH₄/He capacitively coupled plasma for deposition of an amorphous hydrogenated silicon film in consideration of thermal diffusion effects

Numerical analysis of the effect of electrode spacing on deposition rate profiles in a capacitively coupled plasma reactor

2D fluid model analysis for the effect of 3D gas flow on a capacitively coupled plasma deposition reactor

Effect of electrode spacing on the density distributions of electrons, ions, and metastable and radical molecules in SiH4/NH3/N2/He capacitively coupled plasmas

Stress control of sputtered W film using W/WN multilayer

Publications

Publications

publications

The ion kinetics at the wafer edge by the variation of geometry and permittivity of the focus ring in capacitively coupled discharges

First principles investigation on energetics, structure, and mechanical properties of amorphous carbon films doped with B, N, and Cl

Numerical analysis for optimization of the sidewall conditions in a capacitively coupled plasma deposition reactor

Effects of nitrogen doping in amorphous carbon layers on the diffusion of fluorine atoms: A first-principles study

Overall reaction mechanism for a full atomic layer deposition cycle of W films on TiN surfaces: first-principles study

Numerical Analysis of the Incident Ion Energy and Angle Distribution in the DC Magnetron Sputtering for the Variation of Gas Pressure

Uniformity control of the deposition rate profile of a-Si:H film by gas velocity and temperature distributions in a capacitively coupled plasma reactor

Advanced PIC-MCC simulation for the investigation of step-ionization effect in intermediate-pressure capacitively coupled plasmas

Dissociation reaction of B2H6 on TiN surfaces during atomic layer deposition: first-principles study

Effects of the wall boundary conditions of a showerhead plasma reactor on the uniformity control of RF plasma deposition

Analysis of intermediate pressure SiH4/He capacitively coupled plasma for deposition of an amorphous hydrogenated silicon film in consideration of thermal diffusion effects

Numerical analysis of the effect of electrode spacing on deposition rate profiles in a capacitively coupled plasma reactor

2D fluid model analysis for the effect of 3D gas flow on a capacitively coupled plasma deposition reactor

Effect of electrode spacing on the density distributions of electrons, ions, and metastable and radical molecules in SiH4/NH3/N2/He capacitively coupled plasmas

Stress control of sputtered W film using W/WN multilayer

Dissociation reaction of B₂H₆ on TiN surfaces during atomic layer deposition: first-principles study

Analysis of intermediate pressure SiH₄/He capacitively coupled plasma for deposition of an amorphous hydrogenated silicon film in consideration of thermal diffusion effects